Felix Ogundipe on LinkedIn: #day12 of #100daysamplifierdesign Resistive biasing plays a critical… (2024)

#100daysamplifierdesignVoltage buffers are fundamental building blocks in electronics, providing high input impedance and low output impedance for signal integrity. Today, I'd like to share some insights on designing and simulating these essential circuits.Design Considerations:Op-Amp Selection: Choosing the right op-amp is crucial. Consider factors like input offset voltage, gain-bandwidth product, and slew rate based on your application's needs.Frequency Response: Analyze the buffer's frequency response to ensure it faithfully transmits the desired signal frequencies.Input/Output Impedance: High input impedance minimizes loading on the signal source, while low output impedance drives subsequent circuits effectively. Below is an image:

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An Efficiency-Improved Inverse Class- F 2 , 3 Power Amplifier Design Using a Novel Metamaterial-Based Harmonic Control Circuit.https://lnkd.in/eB6RxH3T

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Improving PSRR:Low-Noise Voltage Regulators:Using low-noise voltage regulators can help minimize power supply variations.Decoupling Capacitors:Placing decoupling capacitors at the power supply pins of the op-amp helps filter out high-frequency noise and stabilize the power supply.Dual-Supply Operation:Some op-amps operate with dual power supplies (e.g., ±15V). In such cases, PSRR may be improved by differential input operation.Selecting Op-Amps with High PSRR:When designing circuits where power supply variations are a concern, choose op-amps with high PSRR specifications.External Components:External components, such as RC filters or additional voltage regulation, can be added to further improve power supply rejection.Cascading Stages:In multi-stage amplifiers, cascading stages with good PSRR in the early stages can help maintain overall performance.Understanding the PSRR of an op-amp or analog circuit is crucial for achieving stable and accurate operation in real-world conditions where power supply variations are inevitable. Careful consideration of PSRR, along with proper circuit design and component selection, contributes to the overall reliability of analog systems.

#100daysamplifierdesignDay 26 of #100DaysAmplifierDesign.Today, I learned about the Wilson Current Mirror, which is a three-terminal circuit used in electronics. It has an input terminal that receives input and an output terminal that provides a mirrored current source. In simpler terms, the input current and the mirrored current are the same.The Wilson current mirror is made up of three transistors: Q1, Q2, and Q3. When the input current is applied to the input node, the voltage from the node to the ground begins to rise. This voltage is higher than what is needed to bias Q3's emitter-base junction. As a result, Q3 acts as a common collector amplifier or emitter follower.As the base voltage rises, current flows in Q1's collector and Q1 and Q2 have the same emitter and base potentials. When the input current is precisely balanced by the base current of Q3 and the collector current of Q1, equilibrium is achieved.

Hey connections!! Here is a brief piece of writing about Field-effect transistor.#snsinstitutions#snsdesignthinkers #designthinkingField-Effect Transistors (FETs)FETs control the flow of current by using an electric field. They are categorized mainly into Junction FETs (JFETs) and Metal-Oxide-Semiconductor FETs (MOSFETs).Junction FETs (JFETs):Structure: Have a gate, source, and drain. The gate is made of P-type or N-type material that forms a junction with the channel.Operation: The voltage applied to the gate controls the current between the source and drain. There are two types: N-channel and P-channel, depending on the type of charge carriers in the channel.Application: Used in analog circuits, such as amplifiers and switches.Metal-Oxide-Semiconductor FETs (MOSFETs):Structure: Have a gate insulated by a thin oxide layer from the channel, with source and drain regions.Operation: The voltage applied to the gate creates an electric field that controls the current between the source and drain. MOSFETs come in two types: enhancement-mode and depletion-mode. Enhancement-mode MOSFETs require a voltage to create a conductive channel, while depletion-mode MOSFETs have a conductive channel that can be depleted by applying a voltage.Application: Widely used in digital circuits, power management, and high-speed switching applications.

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#100daysamplifierdesign#day13The importance of Emitter/Source Degeneration Resistor in Electronic Circuits- The Emitter/Source degeneration resistors play a crucial role in the design of amplifier circuits, providing stability, linearity, and control over the gain and frequency response of the amplifier.Describe how it makes gain insensitive to temperature and why it is called degeneration- Emitter/Source degeneration resistors stabilize the gain of transistor amplifier circuits by reducing sensitivity to temperature variations and introducing negative feedback. While they reduce the effective gain of the amplifier, they enhance stability and linearity, making them essential components in many amplifier designs.The simulation results are attached belowCompare gain of a simple CE/CS amplifier with and without emitter degeneration. Without Emitter Degeneration: The gain is 100 and is very sensitive to temperatureWith Emitter Degeneration: The gain is 50 and is not very sensitive to temperature

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LM358 Dual Operational Amplifier Comprehensive Guide: Pinouts, Circuit Diagrams, Equivalents, Useful ExamplesWhat is the LM358?LM358 Pin ArrangementWorking Principle of LM358LM358 Circuit Diagram and Application CircuitHow to Use LM358Features and Specifications of the LM358Applications of LM358LM358 EquivalentLM358 Package and DimensionsLM358 Data SheetThe LM358 chip is a versatile solution for applications where there is no strict requirement for high speed, power consumption, and non-standard supply voltages. Its straightforward switching circuitry is well-suited for most popular devices, offering the benefits of low cost and the elimination of additional frequency compensation components. With the ability to operate on standard supply voltages (up to +32 V) and low current consumption, it is a top choice for electronic projects utilizing operational amplifiers.In this technical article, we will take a comprehensive look at the LM358 Dual Operational Amplifier, covering its equivalents, datasheet, pinouts, circuit diagrams and other key details.📖▶️:https://lnkd.in/g_XQANy6

𝐃𝐞𝐬𝐢𝐠𝐧 𝐚𝐧𝐝 𝐀𝐩𝐩𝐥𝐢𝐜𝐚𝐭𝐢𝐨𝐧 𝐆𝐮𝐢𝐝𝐞 𝐨𝐟 𝐁𝐨𝐨𝐭𝐬𝐭𝐫𝐚𝐩 𝐂𝐢𝐫𝐜𝐮𝐢𝐭 𝐟𝐨𝐫 𝐇𝐢𝐠𝐡-𝐕𝐨𝐥𝐭𝐚𝐠𝐞 𝐆𝐚𝐭𝐞-𝐃𝐫𝐢𝐯𝐞 𝐈𝐂The focus of this topic is the bootstrap gate-drive circuit requirements of the power MOSFET and IGBT in various switching-mode power-conversion applications. Where input voltage levels prohibit the use of direct-gate drive circuits for high-side N-channel power MOSFET or IGBT, the principle of bootstrap gate-drive technique can be considered. This method is utilized as a gate drive and accompanying bias circuit, both referenced to the source of the main switching device. Both the driver and bias circuit swing between the two input voltage rails together with the source of the device. However, the driver and its floating bias can be implemented by low-voltage circuit elements since the input voltage is never applied across their components. The driver and the ground referenced control signal are linked by a level shift circuit that must tolerate the high-voltage difference and considerable capacitive switching currents between the floating high-side and ground-referenced low-side circuits. The high-voltage gate-drive ICs are differentiated by unique level-shift design. To maintain high efficiency and manageable power dissipation, the level-shifters should not draw any current during the on-time of the main switch. A widely used technique for these applications is called pulsed latch level translators.

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A complete guide to Amplifiers and Oscillators.#embeddedsystems #electronics #amplifiers

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**Title: Fundamentals of MOSFET and IGBT Gate Driver Circuits****Author:** Laszlo Balogh**Abstract:**This application report serves as a comprehensive guide for designing high-performance gate drive circuits tailored for high-speed switching applications. It offers a systematic approach to address common design challenges, making it invaluable to power electronics engineers of all expertise levels.The report delves into the analysis of popular circuit solutions and their performance, taking into account factors such as parasitic components, transient effects, and extreme operating conditions. It begins with an overview of MOSFET technology and switching operation, gradually progressing from simpler concepts to more intricate problems.Design procedures for various types of gate drive circuits are thoroughly explained, including ground-referenced and high-side configurations, as well as AC-coupled and transformer-isolated solutions. A dedicated section is devoted to discussing the gate drive requirements specific to MOSFETs in synchronous rectifier applications.By offering a holistic understanding of gate drive circuit design, this report equips engineers with the knowledge and tools necessary to optimize performance and reliability in high-speed switching systems.#GateDriverCircuits#MOSFETTechnology#IGBTTechnology#PowerElectronics#HighSpeedSwitching#DesignChallenges#ParasiticComponents#TransientEffects#SynchronousRectifier#EngineeringGuide

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